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(R)
BU806 BU807
MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
s
s s s
STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
s
APPLICATION HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The devices are silicon epitaxial planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. TO-220
3 1 2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V CEO V EBO IC I CM I DM IB P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = -6V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Damper Diode Peak Forward Current Base Current Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature BU806 400 400 200 6 8 15 10 2 60 -65 to 150 150 Value BU807 330 330 150 Unit V V V V A A A A W
o o
C C
January 1999
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BU806 / BU807
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEV I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (V BE = -6V) Emitter Cut-off Current (I C = 0) Test Conditions for BU807 for BU806 for BU807 for BU806 V EB = 6 V I C = 100 mA I C = 5A I C = 5A I F = 4A for BU807 for BU806 I B = 50mA I B = 50mA 150 200 1.5 2.4 2 V CE = 330 V V CE = 400 V V CE = 330 V V CE = 400 V Min. Typ. Max. 100 100 100 100 3.5 Unit A A A A mA V V V V V
V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) VF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Forward Voltage RESISTIVE LOAD Turn-on Time Turn-off Time Storage Time Fall Time
t on t off ts tf
IC = 5 A I B1 = 50 mA
V CC = 100 V I B2 = -500 mA
0.35 0.4 0.55 0.2
1
s s s s
Pulsed: Pulse duration = 300 s, duty cycle < 1.5 %
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BU806 / BU807
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BU806 / BU807
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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